Tunable diode laser absorption spectroscopy (TDLAS) in the short-wave infrared (SWIR) wavelength region (1.4-3.0um) has recently attracted growing interest, owing to its potential for highly sensitive and highly selective chemical sensing in industrial, automotive, and life science applications. However, the relatively high cost of currently available TDLAS solutions prevents the widespread adoption of this technology into cost-sensitive, high-volume markets. In order to enable ultra-low cost SWIR TDLAS, imec is currently extending its silicon photonics platform with optical gain elements (lasers) using wafer-scale high-quality III-V epitaxial growth on Si through aspect-ratio trapping. Previously, imec demonstrated optically pumped laser devices on such platform, and is currently working towards electrically driven lasers for datacom applications, emitting at 1310nm.
As a post-doctoral researcher, you will extend this work by contributing to the development of SWIR tunable diode lasers in imec’s emerging on III-V/Si photonics platform. More specifically, you will be responsible to drive the early pathfinding work to identify and develop optimized device and material stack concepts to realize efficient, electrically pumped lasers emitting in the 1.4-3.0um wavelength range. Working closely with imec’s experts in III-V epitaxial growth, you will design and evaluate the potential of InGaAs, InP and/or GaSb laser structures grown directly on Si, through rigorous optical modeling and characterization. Subsequently, you will layout the most promising laser diode designs in a test mask and have it submitted for fabrication in imec’s 300mm CMOS pilot line. Finally, you will carry out in-depth functional characterization of the developed laser diodes.
Your responsibilities will be
We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.
We are proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth.
We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a competitive salary.
This postdoctoral position is funded by imec through KU Leuven. Because of the specific financing statute which targets international mobility for postdocs, only candidates who did not stay or work/study in Belgium for more than 24 months in the past 3 years can be considered for the position (short stays such as holiday, participation in conferences, etc. are not taken into account).Lue lisää
|Otsikko||Postdoctoral Researcher Monolithic III-V Lasers on Si for SWIR Sensing Applications|
|Job location||Kapeldreef 75, B-3001 Heverlee|
|Julkaistu||syyskuuta 17, 2019|
|Viimeinen hakupäivä||Tehtävä täytetään mahdollisimman pian|
|Tieteenalat||Optiikka,   Energiatekniikka,   Teknillinen fysiikka,   Sähkötekniikka,   Elektroniikka,   Laserfysiikka,   Fotoniikka  |